ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

ANHUI CRYSTRO CRYSTAL MATERIALS CO., LTD. INNOVATOR FOR MAGNETO OPTICAL CRYSTALS

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Orange Fe Doped LT Lithium Tantalate Wafer High Density

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Orange Fe Doped LT Lithium Tantalate Wafer High Density

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Brand Name :Crystro
Model Number :CR220304-02
Certification :SGS/COC
Place of Origin :China
MOQ :1pc
Price :USD 20~200/pc
Payment Terms :T/T, Western Union, MoneyGram, Paypal
Supply Ability :20000pcs per month
Delivery Time :1-4 weeks
Packaging Details :Transparent clean box
Item :Orange Fe Doped LT (Lithium Tantalate) Wafer for High-Density Holographic Information Storage
Lattice constant :a=5.154Å,c=13.783Å
Diameter :4inch,6inch
Thinckness :0.2mm,0.35mm,0.5mm
Refractive Indices :no=2.176,ne=2.180(at 0.633 µm) no=2.131,ne=2.134(at 1.2 µm)
Orientation :X-112°Y,36°Y,42°Y±0.5
E-O Coefficient :R33=30.4
Curie Point :603±2℃
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Orange Fe Doped LT (Lithium Tantalate) Wafer for High-Density Holographic Information Storage

LiTaO3 Lithium Tantalate (LT) crystal is an important multifunctional crystal material with excellent piezoelectric, ferro-electric, acoustic-optical and electro-opticaleffects.Therefore, it has become a basic functional material in the field of acoustic surface wave (SAW) devices, optical communication, laser, and opto-electronics. Polished LT wafer is widely used in the manufacturing of resonators, filters,transducers and other electronic communication devices, especially for its good mechanical and electrical coupling,temperature coefficient and other comprehensive performance and is used in manufacturing high-frequency acoustic ,surface wave devices, and applied in many mobile phones, intercom, satellite communication, aerospace and other communication fields.

Main Advantages:
High Curie temperature point
Large Thermal power coefficient
Small dielectric constant
Stable chemical and physical properties

Orange Fe Doped LT Lithium Tantalate Wafer High Density


Basic Properties of LiTaO3:

Crystal Structure Trigonal
Lattice constant a=5.154Å,c=13.783Å
Density 7.45g/cm3
Melting Point 1650
Curie Point 603±2
Mohs Hardness 5.5-6 Mohs
Dielectric Constant es11/eo:39~43, es33/eo:42~43et11/eo:51~54, et33/eo:43~46
Thermal Conductivity 1015wm
Thermal Expansion Coefficient a1=a2=1.61×10-6/, a3=4.1×10-6/
Refractive Indices n0=2.176 ne=2.180 @ 633mn
E-O Coefficient R33=30.4
Electro-mechanical coupling factor R15≥0.3
pyroelectric coefficient 2.3×10-7 C/cm2/K
transmission range 400-5000nm


Typical Specifications:

Size Boule or wafer ,Acoustic or Optical grade
Doping Fe, No Doping or With Fe
Boule Length ≥50mm
Wafer Thickness 0.25,0.35,0.50(mm)
Orientation Y42°/Y36°/X/Y/Z or Upon Request
Surface Process Single/Double Sides Polishing
TTV < 10μm
BOW BOW ± (25μm ~40um )
Warp ≤35μm
Flat Width 32.0±2.0(mm) or Upon Request
Roughness Ra≤10Å
Chamfe ≤0.1mm@45°


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