ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

ANHUI CRYSTRO CRYSTAL MATERIALS CO., LTD. INNOVATOR FOR MAGNETO OPTICAL CRYSTALS

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High Light Emission Efficiencyht Yield Gd3Al2Ga3O12 Ce GAGG Ce Scintilation Crystals

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High Light Emission Efficiencyht Yield Gd3Al2Ga3O12 Ce GAGG Ce Scintilation Crystals

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Brand Name :Crystro
Model Number :CR210528-01
Certification :ISO9001,RoHS,Reach
Place of Origin :China
MOQ :1pc
Price :USD 20-200/pc
Payment Terms :T/T, Western Union, MoneyGram, Paypal
Supply Ability :5000pcs per month
Delivery Time :4-5 weeks
Packaging Details :Transparent clean box
Product :High Light Emission Efficiencyht yield Gd3Al2Ga3O12:Ce (GAGG:Ce) Crystal Wafer
Chemical Formular :Gd3Al2Ga3O12
Density :6.63g/cm3
Size Tolerance :±0.05mm
Surface Quality :10/5
Clear Aperture :>90%
Charmfer :<0.2x45°
Application :PET,SPECT,CT..
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High Light Emission Efficiencyht yield Gd3Al2Ga3O12:Ce (GAGG:Ce) Crystal Wafer

GAGG(Ce) (Ce:GAGG, Gd3Al2Ga3O12) is new scintillator for single photon emission computed tomography(SPECT), gamma-ray and compton electron detection. Cerium doped GAGG have many properties that make it suitable for gamma spectroscopy and medical imaging applications. A high photon yield and emission peak around 520 nm makes the material well suited to be readout by Silicon Photo-multiplier detectors.

Crystro's GAGG wafer is grown by Czochralski method.Max diameter reach 3inch,it's now the biggest size in this filed,we can custom size and specs ,rougness<0.5nm.Magneto-optical single crystals like GGG,SGGG,TGG,TSAG are our main products.
Anhui Crystro participate in the kinds exhibitions every year: Laser World of Photonics Munich, Shanghai, Photonics West in San Francisco, CIOE in Shenzhen, etc.
CRYSTRO offers GAGG crystals with:

High density
High light yield
Fast decay time
Chemically inert
High sensitivity
High energy resolution

Main Advantages:

  • Good absorbers with good stopping powers - density 6.63 g/cm³
  • Robust with good mechanically characteristics

Main Applications:

  • Medical Imaging - PET, PEM, SPECT and CT
  • Specialist applications in high energy, nuclear, space and medical physics

Main Properties:

Chemical Formula GdAlGaO₁₂
Atomic Number (Effective) 54.4
Growth Method Czochralski
Density 6.63g/cm3
Mohs Hardness 8
Melting Point 1850℃
Thermal Expansion Coeff. TBA x 10‾⁶




Specifications:

Chamfer<0.2×45°
Orientation Tolerance< 0.5°
Thickness/Diameter Tolerance±0.05 mm
Clear Aperture>90%
Wavefront Distortiondia 70mm
Surface Quality10/5 (Scratch/Dig)
Parallel10″
Perpendicular

5′


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